| PART |
Description |
Maker |
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| ESMMC128 ESMMC512 ESMMC256 ESMMC64 |
64MB/128MB/256MB/512MB MultiMediaCard⑩
64MB/128MB/256MB/512MB MultiMediaCard?/a>
64MB/128MB/256MB/512MB MultiMediaCard垄芒
|
Eorex Corporation
|
| EM48AM1684VTE-6F EM48AM1684VTE-6FE EM48AM1684VTE-7 |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM
256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/ |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85
10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank
512MB (64Mx72) PC2100 2-bank
512MB (64Mx64) PC2100 2-bank
512MB (64Mx72) PC1600 2-bank
256MB (32Mx72) PC1600 1-bank End-of-Life
512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行
256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行
|
Infineon Technologies AG
|
| HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块
256MB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC
SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life
SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| NT256D64S8HA0G-6 |
256MB DIMM
|
Nanya Technology
|
| K4H561638D-GCB0 K4H561638D-GLB0 K4H561638D-GLB3 K4 |
DDR 256MB
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT256S64V8HC0G |
256MB SDRAM Module
|
Nanya Technology
|
| HY5PS561621F-Y5 HY5PS56421F-Y5 HY5PS56821F-Y5 HY5P |
DDR2 SDRAM - 256Mb
|
Hynix Semiconductor
|
